共 50 条
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- [43] DRIFT VELOCITY AND AVERAGE ENERGY OF HOT ELECTRONS IN n-TYPE InSb. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (10): : 1322 - 1324
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- [45] FARADAY-EFFECT DUE TO HOT-ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1081 - 1083
- [47] DETERMINATION OF TEMPERATURE OF HOT ELECTRONS IN N-TYPE GE FROM LONGITUDINAL MAGNETORESISTANCE SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (03): : 765 - &
- [48] CAPTURE OF HOT-ELECTRONS BY IMPURITY CENTERS IN SEMIINSULATING N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 762 - 764
- [49] DRIFT VELOCITY AND AVERAGE ENERGY OF HOT-ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1322 - 1324
- [50] SCATTERING OF HOT-ELECTRONS IN N-TYPE INSB AT LOW-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1626 - 1630