MOBILITY OF HOT ELECTRONS IN N-TYPE INAS

被引：20

作者：

CURBY, RC

FERRY, DK

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1971年 / 3卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.3.3379

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3379 / +

页数：1

共 50 条

[31] ENERGY RELAXATION AND INTERVALLEY RELAXATION OF HOT ELECTRONS IN N-TYPE GERMANIUM
SEEGER, K
SCHWEITZ.D
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 415 - &
[32] DETERMINATION OF THE HALL FACTOR OF HOT-ELECTRONS IN N-TYPE GAAS
BOCHKAREV, S
KACHYULIS, S
PARSHYALYUNAS, I
TAMULAITIS, G
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 818 - 819
[33] ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS
KANEDA, S
ABE, M
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (12): : 112 - &
[34] MICROWAVE CONDUCTIVITY AND INTERVALLEY TRANSFER OF HOT ELECTRONS IN N-TYPE SILICON
HOLMKENN.J
CHAMPLIN, KS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 689 - &
[35] FARADAY EFFECT DUE TO ″HOT″ ELECTRONS IN n-TYPE InSb.
Potapov, V.T.
Sokolovskii, A.V.
Trifonov, V.I.
Yaremenko, N.G.
1973, 6 (07): : 1081 - 1083
[36] SOME PROPERTIER OF LONGITUDINAL MAGNETORESISTANCE OF HOT ELECTRONS IN N-TYPE GERMANIUM
MOVCHAN, EA
BONDAR, NN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (01): : K5 - &
[37] PHOTOCONDUCTIVITY OF COMPENSATED N-TYPE INAS
MIKHAILOVA, MP
PENTSOV, AV
SLOBODCHIKOV, SV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 817 - 819
[38] ELECTRICAL PROPERTIES OF N-TYPE INAS
HARMAN, TC
GOERING, HL
BEER, AC
PHYSICAL REVIEW, 1956, 104 (06): : 1562 - 1564
[39] PIEZORESISTANCE CONSTANTS OF N-TYPE INAS
TUZZOLINO, AJ
PHYSICAL REVIEW, 1958, 112 (01): : 30 - 30
[40] LONGITUDINAL MAGNETORESISTANCE OF N-TYPE INAS
TSIDILKO.IM
AKSELROD, MM
SOKOLOV, VI
HARUS, GI
PHYSICA STATUS SOLIDI, 1965, 9 (02): : K91 - +

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