ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-ALUMINUM OXIDE-SILICON DIOXIDE-SILICON STRUCTURE

被引:1
|
作者
MAEDA, K [1 ]
SHIRAI, K [1 ]
NAKANO, J [1 ]
机构
[1] FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
关键词
D O I
10.1143/JJAP.13.1173
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1173 / 1174
页数:2
相关论文
共 50 条
  • [41] Spray-formed silicon-aluminum
    Jacobson, David M.
    Advanced Materials and Processes, 2000, 157 (03): : 36 - 39
  • [42] Structure and spectroscopy of amorphous silicon dioxide at the silicon/silicon oxide interface.
    Holl, MMB
    Greeley, NJ
    McFeely, FR
    Zhang, KZ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1998, 215 : U160 - U160
  • [43] SILICON-ALUMINUM GATE COMPLEMENTARY IGFETS
    WANG, R
    DEMASSA, TA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 130 - 131
  • [44] PNAF - EFFICIENT SILICON-ALUMINUM ETCHANT
    PAU, JK
    NG, WP
    MARTIN, JE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C128 - C128
  • [45] Polycrystalline silicon thin film prepared by aluminum-induced crystallization with native silicon oxide at the aluminum and silicon interface
    Tang, Zhengxia
    Shen, Honglie
    Lu, Linfeng
    Jiang, Feng
    Guo, Yan
    Shen, Jiancang
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (08): : 1077 - 1081
  • [46] CHARACTERISTICS OF A METAL OXIDE-SILICON STRUCTURE WITH A TUNNEL-TRANSPARENT INSULATING LAYER
    MALIK, AI
    MANASSON, VA
    BARANYUK, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10): : 1203 - 1205
  • [47] HYDROGEN ADSORPTION STATES AT THE EXTERNAL AND INTERNAL PALLADIUM SURFACES OF A PALLADIUM-SILICON DIOXIDE-SILICON STRUCTURE
    PETERSSON, LG
    DANNETUN, HM
    FOGELBERG, J
    LUNDSTROM, I
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 404 - 413
  • [48] ELECTRICAL AND PHOTO-VOLTAIC CHARACTERISTICS OF INDIUM-TIN OXIDE-SILICON HETEROJUNCTIONS
    THOMPSON, WG
    ANDERSON, RL
    SOLID-STATE ELECTRONICS, 1978, 21 (04) : 603 - 608
  • [49] TIME-RESOLVED THERMAL ANNEALING OF INTERFACE TRAPS IN ALUMINUM GATE SILICON OXIDE-SILICON DEVICES
    BURTE, EP
    MATTHIES, P
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (05) : 1113 - 1120
  • [50] Extraction of trap states at the oxide-silicon interface and grain boundary in polycrystalline silicon thin-film transistors
    Kimura, M
    Nozawa, R
    Inoue, S
    Shimoda, T
    Lui, BOK
    Tam, SWB
    Migliorato, P
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01): : 112 - 113