OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN PIN MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATORS FOR THE 1.5-MU-M WAVELENGTH REGION

被引：1
|
作者：
CHANG, TY
SAUER, NJ
HE, Y
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期
关键词：
D O I：
10.1116/1.586742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Comparisons of several molecular beam epitaxy grown GaInAs/AlInAs and GaInAs/Al0.34Ga0.14In0.52As 12-period multiple quantum well structures show that the largest quantum-confined Stark shift (97 nm at -6 V) can be obtained by using the latter structure with the growth temperature set at 500-degrees-C. Deleterious effects of growth interruptions and system contamination are identified in the photocurrent spectra and their physical interpretations are given. The potential benefit of modulating the substrate temperature during growth was found to be negated by the need to introduce growth interruptions.
引用
收藏
页码：929 / 931
页数：3
相关论文
共 50 条
  • [41] GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
    Grandjean, N
    Massies, J
    Dalmasso, S
    Vennéguès, P
    Siozade, L
    Hirsch, L
    APPLIED PHYSICS LETTERS, 1999, 74 (24) : 3616 - 3618
  • [42] 1.5 MU-M WAVELENGTH INGAAS/INGAASP DISTRIBUTED FEEDBACK MULTI-QUANTUM-WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    CHOA, FS
    WU, MC
    CHEN, YK
    LOGAN, RA
    TANBUNEK, T
    CHU, SNG
    TAI, K
    SERGENT, AM
    WECHT, KW
    APPLIED PHYSICS LETTERS, 1991, 59 (19) : 2375 - 2377
  • [43] 1.3-MU-M WAVELENGTH GAINASP INP DOUBLE HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    TSANG, WT
    REINHART, FK
    DITZENBERGER, JA
    APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1094 - 1096
  • [44] InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy
    Grandal, J.
    Pereiro, J.
    Bengoechea-Encabo, A.
    Fernandez-Garrido, S.
    Sanchez-Garcia, M. A.
    Munoz, E.
    Calleja, E.
    Luna, E.
    Trampert, A.
    APPLIED PHYSICS LETTERS, 2011, 98 (06)
  • [45] INGAAS/GAAS/INGAP MULTIPLE-QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    KUO, JM
    CHEN, YK
    WU, MC
    CHIN, MA
    APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2781 - 2783
  • [46] DIFFERENTIAL GAIN AND LINEWIDTH ENHANCEMENT FACTOR OF 1.5-MU-M MULTIPLE-QUANTUM-WELL ACTIVE LAYERS WITH AND WITHOUT BIAXIALLY COMPRESSIVE STRAIN
    KIKUCHI, K
    KAKUI, M
    ZAH, CE
    LEE, TP
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (04) : 314 - 317
  • [47] Determination of the indices of retraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures
    Peiris, FC
    Bindley, U
    Furdyna, JK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1497 - 1500
  • [48] 1.55 μm InAsP/InGaAsP strained multiple-quantum-well laser diodes grown by solid-source molecular beam epitaxy
    Hao, ZB
    Ren, ZY
    He, W
    Luo, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 754 - 757
  • [49] 1.55 μm InAsP/InGaAsP strained multiple-quantum-well laser diodes grown by solid-source molecular beam epitaxy
    Hao, Zhi-Biao
    Ren, Zai-Yuan
    He, Wei
    Luo, Yi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 754 - 757
  • [50] CHANNELED-SUBSTRATE GAAS/ALGAAS MULTIPLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    WU, YH
    WERNER, M
    WANG, S
    APPLIED PHYSICS LETTERS, 1984, 45 (06) : 606 - 608
12345