OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN PIN MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATORS FOR THE 1.5-MU-M WAVELENGTH REGION

被引：1
|
作者：
CHANG, TY
SAUER, NJ
HE, Y
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期
关键词：
D O I：
10.1116/1.586742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Comparisons of several molecular beam epitaxy grown GaInAs/AlInAs and GaInAs/Al0.34Ga0.14In0.52As 12-period multiple quantum well structures show that the largest quantum-confined Stark shift (97 nm at -6 V) can be obtained by using the latter structure with the growth temperature set at 500-degrees-C. Deleterious effects of growth interruptions and system contamination are identified in the photocurrent spectra and their physical interpretations are given. The potential benefit of modulating the substrate temperature during growth was found to be negated by the need to introduce growth interruptions.
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页码：929 / 931
页数：3
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