INFLUENCE OF RADIATION DEFECTS ON THE KINETICS OF FORMATION OF THERMAL DONORS IN SILICON

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作者：
LITVINOV, VV
PALCHIK, GV
URENEV, VI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 02期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：233 / 235
页数：3
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