THE GROWTH OF STRAINED INGAAS ON GAAS - KINETICS VERSUS ENERGETICS

被引：49
|
作者：
WHALEY, GJ
COHEN, PI
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584416
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：625 / 626
页数：2
相关论文
共 50 条
  • [31] CHARACTERISTICS OF DISLOCATIONS AT STRAINED HETEROEPITAXIAL INGAAS/GAAS INTERFACES
    CHANG, KH
    BHATTACHARYA, PK
    GIBALA, R
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 2993 - 2998
  • [32] ANOMALOUS ION CHANNELING IN INGAAS GAAS STRAINED HETEROJUNCTION
    WU, CW
    YIN, SD
    ZHANG, JP
    XIAO, GM
    LIU, JR
    ZHU, PR
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2100 - 2104
  • [33] Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures
    Vasilkova, E., I
    Klochkov, A. N.
    Vinichenko, A. N.
    Kargin, N., I
    Vasil'evskii, I. S.
    SURFACES AND INTERFACES, 2022, 29
  • [34] Effect of lattice mismatch on the decay of RHEED oscillations during growth of strained InGaAs/GaAs heterostructures
    Nemcsics, A
    Riesz, F
    MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS, 2000, 618 : 225 - 230
  • [35] THE EFFECT OF INTERRUPTION DURING THE GROWTH OF STRAINED GAAS/INGAAS/GAAS QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY
    YOON, SF
    LI, HM
    RADHAKRISHNAN, K
    ZHANG, DH
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (12) : 3122 - 3125
  • [36] ROLE OF GROWTH TEMPERATURE IN GSMBE GROWTH OF STRAINED-LAYER INGAAS/GAAS QUANTUM-WELL LASERS
    ZHANG, G
    OVTCHINNIKOV, A
    PESSA, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 209 - 212
  • [37] Minibands modeling in strained balanced InGaAs/GaAs/GaAsP cells
    Galvani, Benoit
    Michelini, Fabienne
    Bescond, Marc
    Sugiyama, Masakazu
    Guillemoles, Jean-Francois
    Cavassilas, Nicolas
    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VI, 2017, 10099
  • [38] OPTICAL INVESTIGATIONS OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS
    ARENT, DJ
    DENEFFE, K
    VANHOOF, C
    DEBOECK, J
    BORGHS, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C378 - C379
  • [39] PARTIAL INTERMIXING OF STRAINED INGAAS/GAAS QUANTUM-WELLS
    MELMAN, P
    KOTELES, ES
    ELMAN, B
    ARMIENTO, CA
    OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) : S981 - S984
  • [40] RELAXATION AND RECOVERY OF HIGHLY STRAINED INGAAS/GAAS QUANTUM WELLS
    PRICE, GL
    USHER, BF
    APPLIED PHYSICS LETTERS, 1989, 55 (19) : 1984 - 1986
12345