THE GROWTH OF STRAINED INGAAS ON GAAS - KINETICS VERSUS ENERGETICS

被引:49
|
作者
WHALEY, GJ
COHEN, PI
机构
来源
关键词
D O I
10.1116/1.584416
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:625 / 626
页数:2
相关论文
共 50 条
  • [21] GROWTH OF INGAAS/GAAS STRAINED QUANTUM-WELLS ON GAAS(111)B SUBSTRATES AND CONTINUOUS-WAVE OPERATION OF (111)-ORIENTED INGAAS STRAINED-QUANTUM-WELL LASERS
    TAKEUCHI, T
    MURAKI, K
    HANAMAKI, Y
    FUKATSU, S
    YAMADA, N
    OGASAWARA, N
    MIKOSHIBA, N
    SHIRAKI, Y
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1338 - 1343
  • [22] Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices
    Grey, R
    David, JPR
    Hill, G
    Pabla, AS
    Pate, MA
    Rees, GJ
    Robson, PN
    RodriguezGirones, PJ
    Sale, TE
    Woodhead, J
    Fisher, TA
    Hogg, RA
    Mowbray, DJ
    Skolnick, MS
    Whittaker, DM
    Willcox, ARK
    MICROELECTRONICS JOURNAL, 1995, 26 (08) : 811 - 820
  • [23] Modified energetics and growth kinetics on H-terminated GaAs (110)
    Galiana, B.
    Benedicto, M.
    Diez-Merino, L.
    Lorbek, S.
    Hlawacek, G.
    Teichert, C.
    Tejedor, P.
    JOURNAL OF CHEMICAL PHYSICS, 2013, 139 (16):
  • [24] ENHANCED BREAKDOWN VOLTAGES IN STRAINED INGAAS/GAAS STRUCTURES
    DAVID, JPR
    MORLEY, MJ
    WOLSTENHOLME, AR
    GREY, R
    PATE, MA
    HILL, G
    REES, GJ
    ROBSON, PN
    APPLIED PHYSICS LETTERS, 1992, 61 (17) : 2042 - 2044
  • [25] CONTRAST EFFECTS IN STRAINED LAYER INGAAS/GAAS SUPERLATTICES
    KIGHTLEY, P
    KIELY, CJ
    GOODHEW, PJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 595 - 598
  • [26] THE STRUCTURE OF STRAINED-LAYER WELLS IN INGAAS GAAS
    DIXON, RH
    KIDD, P
    GOODHEW, PJ
    EMENY, MT
    WHITEHOUSE, CR
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (98): : 407 - 410
  • [27] STUDY OF ELECTRICAL ACTIVATION IN STRAINED INGAAS GAAS HETEROSTRUCTURES
    UCHIDA, Y
    MISHIMA, T
    TANOUE, T
    TAKAHAMA, M
    TAKAHASHI, S
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 447 - 452
  • [28] ON THE ORIGIN OF MISFIT DISLOCATIONS IN INGAAS/GAAS STRAINED LAYERS
    DIXON, RH
    GOODHEW, PJ
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3163 - 3168
  • [29] DISLOCATION DIPOLES IN STRAINED INGAAS LAYERS GROWN ON GAAS
    KIGHTLEY, P
    ARAGONHERRANZ, G
    GOODHEW, PJ
    POND, RC
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 603 - 606
  • [30] HRTEM ANALYSIS OF HETEROINTERFACE OF GAAS/INGAAS STRAINED SUPERLATTICE
    ICHINOSE, H
    SASAKI, H
    ISHIDA, Y
    JOURNAL OF ELECTRON MICROSCOPY, 1988, 37 (05): : 249 - 249