LOCAL SILICON MOLECULAR-BEAM EPITAXY WITH MICROSHADOW MASKS

被引：13
|
作者：
HAMMERL, E
EISELE, I
机构：
[1] Institut für Physik, Fakultät für Elektrotechnik, Universität der Bundeswehr München
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期
关键词：
D O I：
10.1063/1.109422
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A novel method for the in situ patterning of silicon layers grown by molecular beam epitaxy is investigated. Using microshadow masks deposited directly onto silicon substrate epitaxial mesa patterns can be fabricated. The local growth and the resulting geometrical shape of the mesa structures is studied as a function of the substrate temperature during the MBE process.
引用
收藏
页码：2221 / 2223
页数：3
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