DRAG EFFECT IN INTERBAND 2-PHOTON TRANSITIONS IN SEMICONDUCTORS

被引：0
|
作者：
AGAFONOV, VG [1 ]
VALOV, PM [1 ]
RYVKIN, BS [1 ]
YAROSHETSKII, ID [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST, LENINGRAD, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1868 / 1870
页数：3
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