DRAG EFFECT IN INTERBAND 2-PHOTON TRANSITIONS IN SEMICONDUCTORS

被引：0

作者：

AGAFONOV, VG ^{[1
]}

VALOV, PM ^{[1
]}

RYVKIN, BS ^{[1
]}

YAROSHETSKII, ID ^{[1
]}

机构：

[1] AF IOFFE PHYSICOTECH INST, LENINGRAD, USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 6卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1868 / 1870

页数：3

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