INSITU OBSERVATION OF MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS UNDER DEFICIENT AS-4 FLUX BY SCANNING REFLECTION ELECTRON-MICROSCOPY

被引：37
|
作者：
YAMADA, K
INOUE, N
OSAKA, J
WADA, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期
关键词：
D O I：
10.1063/1.101829
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：622 / 624
页数：3
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