INSITU OBSERVATION OF MOLECULAR-BEAM EPITAXY OF GAAS AND ALGAAS UNDER DEFICIENT AS-4 FLUX BY SCANNING REFLECTION ELECTRON-MICROSCOPY

被引：37

|

作者：

YAMADA, K

INOUE, N

OSAKA, J

WADA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 07期

关键词：

D O I：

10.1063/1.101829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：622 / 624

页数：3

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