STRUCTURE OF W+-ION IMPLANTED AND ANNEALED SI-LAYERS

被引:0
|
作者
CHITKO, VI
KOMAROV, FF
SAMOILYUK, TT
SOLOVEV, VS
SHIRYAEV, SY
机构
来源
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:85 / 89
页数:5
相关论文
共 50 条
  • [1] PHOTOACOUSTIC MONITORING OF DAMAGE IN ION-IMPLANTED AND ANNEALED SI LAYERS
    LUCIANI, L
    ZAMMIT, U
    MARINELLI, M
    PIZZOFERRATO, R
    SCUDIERI, F
    MARTELLUCCI, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (02): : 205 - 209
  • [2] ION-BEAM MIXING OF TI/SI-LAYERS
    KOHLHOF, K
    MANTL, S
    STRITZKER, B
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 129 - 131
  • [3] SUBGAP ABSORPTION STUDY OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI LAYERS
    LUCIANI, L
    ZAMMIT, U
    MARINELLI, M
    PIZZOFERRATO, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (05): : 495 - 498
  • [4] Structural properties of Fe ion implanted and ruby laser annealed Si layers
    Bayazitov, RM
    Batalov, RI
    Khaibullin, IB
    Ivlev, GD
    Dézsi, I
    Kótai, E
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (03) : 468 - 471
  • [5] CRYSTALLOGRAPHIC NATURE AND FORMATION MECHANISMS OF HIGHLY IRREGULAR STRUCTURE IN IMPLANTED AND ANNEALED SI LAYERS
    KOMAROV, FF
    SOLOVYEV, VS
    SHIRYAYEV, SY
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 169 - 178
  • [6] Investigation of radiation damage in ion implanted and annealed SiC layers
    Wesch, W
    Heft, A
    Heindl, J
    Strunk, HP
    Bachmann, T
    Glaser, E
    Wendler, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 339 - 345
  • [7] A NEW TEST STRUCTURE FOR RECOMBINATION MEASUREMENTS IN THIN SI-LAYERS FOR VLSI STRUCTURES
    BELLONE, S
    SPIRITO, P
    EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS, 1990, 1 (03): : 351 - 362
  • [8] Study of optimal ion implanted layers for Si+ implanted Si-GaAs
    Li, Guohui
    Han, Dejun
    Chen, Ruyi
    Ji, Chengzhou
    Wang, Cehuan
    Xia, Deqian
    Zhu, Hongqing
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (01): : 40 - 47
  • [9] Quantitative characterization of ion-implanted layers in Si
    Salnick, A
    Hovinen, M
    Chen, L
    Chu, H
    Opsal, J
    Rosenewaig, A
    PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE, 1999, 463 : 497 - 499
  • [10] INVESTIGATION OF LASER-ANNEALED ANTIMONY IMPLANTED Si BY ION BACKSCATTERING AND CHANNELING AND STRUCTURE ANALYSIS.
    Bhattacharya, P.K.
    Kansara, M.J.
    Nathan, T.P.S.
    Singh, P.
    Wagh, A.G.
    Applied Physics A: Solids and Surfaces, 1986, A39 (02): : 147 - 153