共 50 条
- [1] PHOTOACOUSTIC MONITORING OF DAMAGE IN ION-IMPLANTED AND ANNEALED SI LAYERS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (02): : 205 - 209
- [2] ION-BEAM MIXING OF TI/SI-LAYERS VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 129 - 131
- [3] SUBGAP ABSORPTION STUDY OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI LAYERS APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (05): : 495 - 498
- [5] CRYSTALLOGRAPHIC NATURE AND FORMATION MECHANISMS OF HIGHLY IRREGULAR STRUCTURE IN IMPLANTED AND ANNEALED SI LAYERS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 169 - 178
- [6] Investigation of radiation damage in ion implanted and annealed SiC layers NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 339 - 345
- [7] A NEW TEST STRUCTURE FOR RECOMBINATION MEASUREMENTS IN THIN SI-LAYERS FOR VLSI STRUCTURES EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS, 1990, 1 (03): : 351 - 362
- [8] Study of optimal ion implanted layers for Si+ implanted Si-GaAs Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (01): : 40 - 47
- [9] Quantitative characterization of ion-implanted layers in Si PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE, 1999, 463 : 497 - 499
- [10] INVESTIGATION OF LASER-ANNEALED ANTIMONY IMPLANTED Si BY ION BACKSCATTERING AND CHANNELING AND STRUCTURE ANALYSIS. Applied Physics A: Solids and Surfaces, 1986, A39 (02): : 147 - 153