CRYSTALLOGRAPHIC NATURE AND FORMATION MECHANISMS OF HIGHLY IRREGULAR STRUCTURE IN IMPLANTED AND ANNEALED SI LAYERS

被引:11
|
作者
KOMAROV, FF
SOLOVYEV, VS
SHIRYAYEV, SY
机构
来源
关键词
D O I
10.1080/00337577908209134
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:169 / 178
页数:10
相关论文
共 50 条
  • [1] STRUCTURE OF W+-ION IMPLANTED AND ANNEALED SI-LAYERS
    CHITKO, VI
    KOMAROV, FF
    SAMOILYUK, TT
    SOLOVEV, VS
    SHIRYAEV, SY
    CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1986, 13 (02): : 85 - 89
  • [2] Strain relaxation mechanisms in He+-implanted and annealed Si1-xGex layers on Si(001) substrates
    Christiansen, SH
    Mooney, PM
    Chu, JO
    Grill, A
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 27 - 32
  • [3] PHOTOACOUSTIC MONITORING OF DAMAGE IN ION-IMPLANTED AND ANNEALED SI LAYERS
    LUCIANI, L
    ZAMMIT, U
    MARINELLI, M
    PIZZOFERRATO, R
    SCUDIERI, F
    MARTELLUCCI, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (02): : 205 - 209
  • [4] On the formation of blisters in annealed hydrogenated a-Si layers
    Miklós Serényi
    Cesare Frigeri
    Zsolt Szekrényes
    Katalin Kamarás
    Lucia Nasi
    Attila Csik
    Nguyen Quoc Khánh
    Nanoscale Research Letters, 8
  • [5] On the formation of blisters in annealed hydrogenated a-Si layers
    Serenyi, Miklos
    Frigeri, Cesare
    Szekrenyes, Zsolt
    Kamaras, Katalin
    Nasi, Lucia
    Csik, Attila
    Nguyen Quoc Khanh
    NANOSCALE RESEARCH LETTERS, 2013, 8 : 1 - 7
  • [6] The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals
    T. M. Poletika
    L. L. Meisner
    S. L. Girsova
    A. V. Tverdokhlebova
    S. N. Meisner
    Technical Physics Letters, 2016, 42 : 280 - 283
  • [7] The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals
    Poletika, T. M.
    Meisner, L. L.
    Girsova, S. L.
    Tverdokhlebova, A. V.
    Meisner, S. N.
    TECHNICAL PHYSICS LETTERS, 2016, 42 (03) : 280 - 283
  • [8] SUBGAP ABSORPTION STUDY OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI LAYERS
    LUCIANI, L
    ZAMMIT, U
    MARINELLI, M
    PIZZOFERRATO, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (05): : 495 - 498
  • [9] Structural properties of Fe ion implanted and ruby laser annealed Si layers
    Bayazitov, RM
    Batalov, RI
    Khaibullin, IB
    Ivlev, GD
    Dézsi, I
    Kótai, E
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (03) : 468 - 471
  • [10] HIGHLY DOPED IMPLANTED DONOR LAYERS IN LASER ANNEALED GALLIUM-ARSENIDE
    WOODCOCK, JM
    BUTLER, H
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 81 - 84