DEPTH PROFILE MEASUREMENTS OF COPPER IN SILICON BY ION-INDUCED X-RAY-EMISSION

被引:2
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作者
BERNHARD, F
KERKOW, H
KUDELLA, F
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D O I
10.1080/00337578008243076
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TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
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页码:107 / 111
页数:5
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