DEPTH PROFILE MEASUREMENTS OF COPPER IN SILICON BY ION-INDUCED X-RAY-EMISSION

被引：2
|
作者：
BERNHARD, F
KERKOW, H
KUDELLA, F
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 49卷 / 1-3期
关键词：
D O I：
10.1080/00337578008243076
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：107 / 111
页数：5
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