THEORY OF PIEZOTHERMOPOWER ANISOTROPY IN N-TYPE SI IN REGION OF PHONON DRAG

被引：2

作者：

LUTSYAK, VS

NITSOVICH, VM

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1971年 / 48卷 / 01期

关键词：

D O I：

10.1002/pssb.2220480135

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：359 / +

页数：1

共 50 条

[21] INVESTIGATION OF THE ANISOTROPY OF THE ELECTRON DRAG BY PHONONS IN n-TYPE Ge.
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Sus', V.A.
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[22] DETERMINATION OF THE ANISOTROPY PARAMETER OF THE DRAG THERMOELECTRIC-POWER OF N-TYPE SI DEFORMED ALONG THE [110] DIRECTION
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[23] ANISOTROPY OF SURFACE CONDUCTIVITY IN ACCUMULATION LAYERS IN N-TYPE SI
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[24] INVESTIGATION OF THE FUNDAMENTAL PARAMETERS GOVERNING THE PHONON-PHONON RELAXATION IN N-TYPE SI
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[25] ANGULAR-DEPENDENCE OF PIEZOTHERMOELECTRIC POWER OF UNIAXIALLY DEFORMED N-TYPE SILICON IN THE ELECTRON-PHONON DRAG REGION
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[26] TRANSPORT THEORY OF THE ACOUSTOELECTRIC EFFECT IN SEMICONDUCTORS SUCH AS n-TYPE Ge AND n-TYPE Si.
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[27] ANALYSIS OF PHONON-DRAG THERMOMAGNETIC EFFECTS IN N-TYPE GERMANIUM .2.
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[28] TRANSPORT-THEORY OF ACOUSTOELECTRIC EFFECT IN SEMICONDUCTORS SUCH AS N-TYPE GE AND N-TYPE SI
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[29] INFLUENCE OF ELECTRON SCATTERING ANISOTROPY UPON PHONON DRAG EFFECT IN N-GE AND N-SI
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[30] INTRABAND ANISOTROPY OF CARRIER SCATTERING IN PLASTICALLY DEFORMED N-TYPE SI
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