共 50 条
- [1] INVESTIGATION OF ANISOTROPY OF ELECTRON DRAG BY PHONONS IN N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1402 - 1404
- [2] PHONON-PHONON RELAXATION AND DRAG EFFECTS IN n-TYPE Ge. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (09): : 1106 - 1108
- [4] INFLUENCE OF THE COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN n-TYPE Ge. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (10): : 1315 - 1318
- [7] TEMPERATURE DEPENDENCE OF THE ANISOTROPIC DRIFT VELOCITY OF HOT ELECTRONS IN n-TYPE Ge. 1972, 6 (06): : 891 - 895
- [8] ANISOTROPY OF HOT-ELECTRON NOISE IN N-TYPE GE AT MICROWAVE-FREQUENCIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 784 - 785
- [9] MAGNETOPHONON OSCILLATIONS OF DRAG THERMOELECTRIC POWER OF N-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 869 - &
- [10] EXPERIMENTAL INVESTIGATION OF THE ANISOTROPY OF THE ELECTRON-ENERGY SPECTRUM OF N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1182 - 1184