FREE-EXCITON TRANSITIONS IN OPTICAL-ABSORPTION SPECTRA OF GAAS1-XPX

被引：60

作者：

NELSON, RJ

HOLONYAK, N

GROVES, WO

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] MONSANTO CO,ST LOUIS,MO 63166

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.13.5415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5415 / 5419

页数：5

共 50 条

[21] REFLECTIVITY OF GAAS1-XPX ALLOYS
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[22] ABSORPTION AND PHOTOLUMINESCENT MEASUREMENTS IN INDIRECT, NITROGEN DOPED GAAS1-XPX
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[23] LUMINESCENCE AND ABSORPTION PROPERTIES OF N ISOELECTRONIC TRAP IN GAAS1-XPX
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[28] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
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[30] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX
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