FREE-EXCITON TRANSITIONS IN OPTICAL-ABSORPTION SPECTRA OF GAAS1-XPX

被引：60
|
作者：
NELSON, RJ
HOLONYAK, N
GROVES, WO
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] MONSANTO CO,ST LOUIS,MO 63166
来源：
PHYSICAL REVIEW B | 1976年 / 13卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.13.5415
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5415 / 5419
页数：5
相关论文
共 50 条
  • [11] DISLOCATIONS IN GAAS1-XPX
    STRINGFELLOW, GB
    GREENE, PE
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 502 - +
  • [12] DISLOCATIONS IN GAAS1-XPX
    MADER, S
    BLAKESLEE, AE
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (02) : 151 - 162
  • [13] TEMPERATURE DEPENDENCE OF ELECTROREFLECTANCE SPECTRA IN GAAS1-XPX ALLOYS
    KYSER, DS
    REHN, V
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 415 - &
  • [14] KINETICS OF FREE-EXCITON LUMINESCENCE IN GAAS
    AAVIKSOO, J
    REIMAND, I
    ROSSIN, VV
    TRAVNIKOV, VV
    PHYSICAL REVIEW B, 1992, 45 (03): : 1473 - 1476
  • [15] NO-PHONON AND PHONON-ASSISTED EXCITON ABSORPTION IN GAAS1-XPX WITH INDIRECT ENERGY-GAP
    PIKHTIN, AN
    YASKOV, DA
    RAZBEGAEV, VN
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 50 (02): : 717 - +
  • [16] CATHODOLUMINESCENCE OF GAAS1-XPX ALLOYS
    MARCINIAK, HC
    WITTRY, DB
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4823 - 4828
  • [17] INFRARED LUMINESCENCE OF GAAS1-XPX
    HEINE, G
    MORGENST.M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02): : K139 - K141
  • [18] Influence of ionic character on GaAs1-xPx:N photoluminescence spectra
    Meftah, A
    Oueslati, M
    SOLID STATE COMMUNICATIONS, 1997, 101 (01) : 27 - 31
  • [19] GAAS1-XPX PHOTODIODES FOR CAMERAS
    SUZUKI, H
    NAKAMURA, T
    KIYOHASHI, K
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1976, 66 (10) : 1080 - 1080
  • [20] GAAS1-XPX INJECTION LASERS
    PANKOVE, JI
    NELSON, H
    TIETJEN, JJ
    HEGYI, IJ
    MARUSKA, HP
    RCA REVIEW, 1967, 28 (04): : 560 - &
12345