共 50 条
- [41] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421EPHRATH, LM
- [42] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING AND CF4-H2JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C284 - C284EPHRATH, LM
- [43] Fluorocarbon plasma etching of silicon: Factors controlling etch rateJOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 65 - 70Humbird, DGraves, DB
- [44] Fluorocarbon plasma etching of silicon: Factors controlling etch rate Graves, D.B. (graves@uclink.berkeley.edu), 1600, American Institute of Physics Inc. (96):
- [45] Etch characteristics of nickel oxide thin films using inductively coupled plasma reactive ion etchingELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (02) : D23 - D26Cho, Han NaMin, Su RyunBae, Hyung JinLee, Jung HyunChung, Chee Won
- [46] DATA-BASED MODELING FOR REACTIVE ION ETCHING: EFFECTIVENESS OF AN ARTIFICIAL NEURAL NETWORK MODEL FOR ESTIMATING TUNGSTEN SILICON NITRIDE ETCH RATEPROCEEDINGS OF THE ASME 2020 INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION, IMECE2020, VOL 2B, 2020,Walters, Madeline A.Fan, ZhaoyanSencer, Burak
- [47] METAL-OXIDE SEMICONDUCTOR CHARACTERIZATION OF SILICON SURFACES THERMALLY OXIDIZED AFTER REACTIVE ION ETCHING AND MAGNETICALLY ENHANCED REACTIVE ION ETCHINGJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 249 - 252SETTLEMYER, KTRUZYLLO, JHWANG, DKLEARY, HJ
- [48] ELECTRON-BEAM-INDUCED CURRENT AND ATOMIC-FORCE MICROSCOPY STUDIES ON SILICON ETCH STEPS CREATED BY REACTIVE ION ETCHING AND REACTIVE ION-BEAM ETCHINGMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3): : 223 - 225JAGERWALDAU, GHABERMEIER, HUZWICKER, GBUCHER, E
- [49] Anomalous high rate reactive ion etching process for indium tin oxideJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (5B): : L629 - L631Kuo, Y
- [50] DAMAGE TO THE SILICON LATTICE BY REACTIVE ION ETCHINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : 2876 - 2880STRUNK, HPCERVA, HMOHR, EG