SILICON LOSS AND TRANSIENT ETCH RATE IN SELECTIVE REACTIVE ION ETCHING OF OXIDE OVERLAYERS

被引：6
|
作者：
OEHRLEIN, GS
KALISH, R
机构：
[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL
[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 26期
关键词：
D O I：
10.1063/1.100673
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2698 / 2700
页数：3
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