INTERPRETATION OF CHANNELING EFFECT MEASUREMENTS OF DISORDER IN ION-IMPLANTED SILICON

被引：5
|
作者：
EISEN, FH [1 ]
BOTTIGER, J [1 ]
机构：
[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 01期
关键词：
D O I：
10.1063/1.1654996
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3 / 5
页数：3
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