INTERPRETATION OF CHANNELING EFFECT MEASUREMENTS OF DISORDER IN ION-IMPLANTED SILICON

被引：5
|
作者：
EISEN, FH [1 ]
BOTTIGER, J [1 ]
机构：
[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 01期
关键词：
D O I：
10.1063/1.1654996
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3 / 5
页数：3
相关论文
共 50 条
  • [31] Effect of fluorine on the redistribution of boron in ion-implanted silicon
    1600, (74):
  • [32] EPITAXIAL SILICON GROWTH ON ION-IMPLANTED SILICON
    SARASWAT, KC
    MEINDL, JD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C106 - C107
  • [33] Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters
    Lulli, G
    Albertazzi, E
    Bianconi, M
    Satta, A
    Balboni, S
    Colombo, L
    PHYSICAL REVIEW B, 2004, 69 (16): : 165216 - 1
  • [34] DOSE DEPENDENCE OF RESIDUAL LATTICE DISORDER IN ION-IMPLANTED AND ANNEALED SILICON
    CHRISTODOULIDES, CE
    GRANT, WA
    WILLIAMS, JS
    APPLIED PHYSICS LETTERS, 1977, 30 (07) : 322 - 323
  • [35] CHARACTERIZATION OF ION-IMPLANTED SILICON - CORRELATION OF OPTICAL MEASUREMENTS WITH MICROSTRUCTURAL OBSERVATIONS
    DONLON, WT
    JAMES, JV
    BOMBACK, JL
    HUO, CR
    WANG, CC
    ULTRAMICROSCOPY, 1987, 22 (1-4) : 305 - 317
  • [36] CHARACTERIZATION OF ION-IMPLANTED SILICON - CORRELATION OF OPTICAL MEASUREMENTS WITH MICROSTRUCTURAL OBSERVATIONS
    DONTON, WT
    JAMES, JV
    BOMBACK, JL
    WANG, CC
    HUO, CR
    JOURNAL OF METALS, 1986, 38 (10): : 28 - 28
  • [37] Extracting defect profiles in ion-implanted GaN from ion channeling
    Cacador, A.
    Jozwik, P.
    Magalhaes, S.
    Marques, J. G.
    Wendler, E.
    Lorenz, K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166
  • [38] COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS
    DESALVO, A
    ROSA, R
    ZIGNANI, F
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3755 - &
  • [39] Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique
    Hadjersi, T
    Boussaa, N
    Zilabdi, M
    Benazzouz, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 193 : 336 - 340
  • [40] The structure of ion-implanted amorphous silicon
    Gibson, JM
    Cheng, JY
    Voyles, P
    Treacy, MMJ
    Jacobson, DC
    MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 27 - 30
12345