ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES

被引：69

作者：

DAW, MS

SMITH, DL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1028 / 1031

页数：4

共 14 条

[1] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[3] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J].

BEST, JS .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :522-527

[4] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].

BRILLSON, LJ .

PHYSICAL REVIEW B, 1978, 18 (06) :2431-2446

[5] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[6] VACANCIES NEAR SEMICONDUCTOR SURFACES [J].

DAW, MS ;

SMITH, DL .

PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156

[7] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J].

LINDAU, I ;

CHYE, PW ;

GARNER, CM ;

PIANETTA, P ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1332-1339

[8] THEORY OF METAL-SEMICONDUCTOR INTERFACES [J].

MELE, EJ ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW B, 1978, 17 (04) :1528-1539

[9] INTERACTION OF CHLORINE WITH INDIUM-PHOSPHIDE SURFACES [J].

MONTGOMERY, V ;

WILLIAMS, RH ;

VARMA, RR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (10) :1989-2000

[10]

MONTGOMERY V, UNPUBLISHED

← 1 2 →