SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS

被引：227
作者：
BERNHOLC, J
PANTELIDES, ST
机构：
来源：
PHYSICAL REVIEW B | 1978年 / 18卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.18.1780
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：1780 / 1789
页数：10
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