A MODEL FOR SELF-CONSISTENT CLUSTER CALCULATIONS OF ELECTRONIC-STRUCTURE OF DOPED SEMICONDUCTORS BY MEANS OF SCF-X-ALPHA SCATTERED WAVE METHOD

被引：27

作者：

CARTLING, B

ROOS, B

WAHLGREN, U

机构：

[1] ROY INST TECHNOL, DEPT THEORET PHYS, S-100 44 STOCKHOLM 70, SWEDEN

[2] UNIV STOCKHOLM, INST THEORET PHYS, S-113 46 STOCKHOLM, SWEDEN

[3] RES INST PHYS, S-104 05 STOCKHOLM 50, SWEDEN

来源：

CHEMICAL PHYSICS LETTERS | 1973年 / 21卷 / 02期

关键词：

D O I：

10.1016/0009-2614(73)80161-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：380 / 384

页数：5

共 18 条

[1] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].

COLLINS, CB ;

CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1409-1414

[2] CALCULATION OF MOLECULAR ESCA SPECTRA BY MULTIPLE-SCATTERING X-ALPHA METHOD [J].

CONNOLLY, JW ;

SIEGBAHN, H ;

GELIUS, U ;

NORDLING, C .

JOURNAL OF CHEMICAL PHYSICS, 1973, 58 (10) :4265-4277

[3] ELECTRONEGATIVITY .1. ORBITAL ELECTRONEGATIVITY OF NEUTRAL ATOMS [J].

HINZE, J ;

JAFFE, HH .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1962, 84 (04) :540-&

[4]

JOHNSON KH, 1973, ADV QUANTUM CHEMISTR, V7

[5] COMPARISON OF SCREENED EXCHANGE WITH SLATER APPROXIMATION FOR SILICON [J].

KANE, EO .

PHYSICAL REVIEW B, 1972, 5 (04) :1493-&

[6] MODIFIED MUFFIN TIN POTENTIALS FOR BAND STRUCTURE OF SEMICONDUCTORS [J].

KELLER, J .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (05) :L85-&

[7]

KRAG WE, 1966, J PHYS SOC JPN, VS 21, P230

[8]

KRAG WE, 1966, P INT C PHYSICS SEMI

[9] POINT DEFECT CALCULATIONS IN DIAMOND-TYPE CRYSTALS BY EXTENDED HUCKEL METHOD .2. SUBSTITUTIONAL IMPURITY PROBLEM [J].

LARKINS, FP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (18) :3077-&

[10] POINT DEFECT CALCULATIONS IN DIAMOND-TYPE CRYSTALS BY EXTENDED HUCKEL METHOD .1. GENERAL THEORY AND VACANCY PROBLEM [J].

LARKINS, FP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (18) :3065-&

← 1 2 →