SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM

被引:194
作者
BARAFF, GA
KANE, EO
SCHLUTER, M
机构
[1] Bell Laboratories, Murray Hill
关键词
D O I
10.1103/PhysRevLett.43.956
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This Letter analyzes the electron states associated with the silicon vacancy and proposes a distortion model for the surrounding atoms that is derived from self-consistent calculations for single-particle states and from model calculations of elastic restoring forces. The predicted level structure is such that V+ is, contrary to currently accepted ideas, a metastable state which decays either to V0 or to V++, depending on the Fermi energy. © 1979 The American Physical Society.
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页码:956 / 959
页数:4
相关论文
共 15 条
[1]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[2]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[3]  
BARAFF GA, 1979, PHYS REV B, V10, P4965
[4]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[5]  
BERNHOLC J, COMMUNICATION
[6]   NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].
HENRY, CH ;
LANG, DV .
PHYSICAL REVIEW B, 1977, 15 (02) :989-1016
[7]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCY [J].
JAROS, M ;
RODRIGUEZ, CO ;
BRAND, S .
PHYSICAL REVIEW B, 1979, 19 (06) :3137-3151
[8]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&
[9]  
LARKINS FP, 1971, J PHYS PART C SOLID, V4, P143, DOI 10.1088/0022-3719/4/2/002
[10]   LATTICE DISTORTION NEAR VACANCIES IN DIAMOND AND SILICON .2. [J].
LARKINS, FP ;
STONEHAM, AM .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :154-&