Numerical computation of charge carriers optical phonon scattering mobility in III-V semiconductor compounds

被引：1
|
作者：
Kobaidze, Revaz [1 ]
Khutsishvili, Elza [1 ]
Kekelidze, Nodar [1 ]
机构：
[1] Ferdinand Tavadze Inst Met & Mat Sci, Lab Semicond Mat, 10 Mindeli Str, Tbilisi 0186, Georgia
来源：
TRANSACTIONS OF A RAZMADZE MATHEMATICAL INSTITUTE | 2018年 / 172卷 / 03期
关键词：
D O I：
10.1016/j.trmi.2018.06.002
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
Optical phonon scattering mobility has been calculated using numerical methods, and a general program was developed in Matlab to calculate mobility due to scattering on optical phonons. Calculations were done for InAs material that was irradiated by fast neutrons. (C) 2018 Ivane Javakhishvili Tbilisi State University. Published by Elsevier B.V.
引用
收藏
页码：404 / 408
页数：5
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