Numerical computation of charge carriers optical phonon scattering mobility in III-V semiconductor compounds

被引：1

作者：

Kobaidze, Revaz ^{[1
]}

Khutsishvili, Elza ^{[1
]}

Kekelidze, Nodar ^{[1
]}

机构：

[1] Ferdinand Tavadze Inst Met & Mat Sci, Lab Semicond Mat, 10 Mindeli Str, Tbilisi 0186, Georgia

来源：

TRANSACTIONS OF A RAZMADZE MATHEMATICAL INSTITUTE | 2018年 / 172卷 / 03期

关键词：

D O I：

10.1016/j.trmi.2018.06.002

中图分类号：

O1 [数学];

学科分类号：

0701 ; 070101 ;

摘要：

Optical phonon scattering mobility has been calculated using numerical methods, and a general program was developed in Matlab to calculate mobility due to scattering on optical phonons. Calculations were done for InAs material that was irradiated by fast neutrons. (C) 2018 Ivane Javakhishvili Tbilisi State University. Published by Elsevier B.V.

引用

页码：404 / 408

页数：5

共 50 条

[1] Scaling of the optical phonon frequency in diamond-like elements and III-V group semiconductor compounds
Reyes, JLE
Poniatowski, EH
REVISTA MEXICANA DE FISICA, 2004, 50 (06) : 629 - 632
[2] Optical investigations on isovalent δ layers in III-V semiconductor compounds
Schwabe, R., 1600, American Inst of Physics, Woodbury, NY, United States (77):
[3] CHALLENGES IN III-V SEMICONDUCTOR COMPOUNDS
GATOS, HC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C94 - C94
[4] Porosity-induced optical phonon engineering in III-V compounds
Tiginyanu, IM
Irmer, G
Monecke, J
Hartnagel, HL
Vogt, A
Schwab, C
Grob, JJ
MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 : 99 - 104
[5] Porosity-induced optical phonon engineering in III-V compounds
Tiginyanu, I.M.
Irmer, G.
Monecke, J.
Hartnagel, H.L.
Vogt, A.
Schwab, C.
Grob, J.-J.
Materials Research Society Symposium - Proceedings, 1999, 536 : 99 - 104
[6] MOBILITY CHARACTERISTICS OF NONEQUILIBRIUM CARRIERS IN III-V COMPOUNDS AT LOW LATTICE TEMPERATURES
GHORAI, AK
BHATTACHARYA, DP
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (02) : 165 - 171
[7] Phonon transmission in III-V semiconductor superlattices and alloys
Antonyuk, VB
Larsson, M
Mal'shukov, AG
Chao, KA
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (05) : 347 - 352
[8] POLAR SCATTERING IN III-V COMPOUNDS
HILSUM, C
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (489): : 414 - 416
[9] Application of pseudopotential to III-V semiconductor compounds
Jivani, AR
Gajjar, PN
Jani, AR
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2004, 42 (11) : 833 - 836
[10] RESONANT STATES IN III-V SEMICONDUCTOR COMPOUNDS
IADONISI, G
ZUCCHELLI, GP
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 62 (02): : 625 - 634

← 1 2 3 4 5 →