(110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION

被引：44
作者：
CHADI, DJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期
关键词：
D O I：
10.1116/1.569746
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The relaxed (110) surface electronic structure of GaAs is calculated within the tight-binding model. The symmetry and dispersion of the surface states are compared to those measured by angle-resolved photoemission experiments. Variations in photoemission intensity with measurement geometry are related to matrix-element modulation effects and it is shown that angle-resolved measurements can give information on the symmetry of surface states.
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页码：1244 / 1248
页数：5
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