ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES

被引：26
|
作者：
HUNSPERGER, RG
MARSH, OJ
机构：
来源：
METALLURGICAL TRANSACTIONS | 1970年 / 1卷 / 03期
关键词：
D O I：
10.1007/BF02811583
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
收藏
页码：603 / +
页数：1
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