BEHAVIOR OF ION-IMPLANTED JUNCTION DIODES IN 3C SIC

被引：22
|
作者：
AVILA, RE [1 ]
KOPANSKI, JJ [1 ]
FUNG, CD [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,CASE INST TECHNOL,DEPT ELECT ENGN,CLEVELAND,OH 44106
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期
关键词：
D O I：
10.1063/1.339291
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3469 / 3471
页数：3
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