BEHAVIOR OF ION-IMPLANTED JUNCTION DIODES IN 3C SIC

被引:22
|
作者
AVILA, RE [1 ]
KOPANSKI, JJ [1 ]
FUNG, CD [1 ]
机构
[1] CASE WESTERN RESERVE UNIV,CASE INST TECHNOL,DEPT ELECT ENGN,CLEVELAND,OH 44106
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D O I
10.1063/1.339291
中图分类号
O59 [应用物理学];
学科分类号
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页码:3469 / 3471
页数:3
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