DEPOSITION AND CHARACTERIZATION OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE THIN-FILMS

被引：46
|
作者：
DAVIS, RF
机构：
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 137卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(94)91266-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The extreme thermal and electronic properties of diamond, SiC and GaN provide combinations of attributes which lead to the highest figures of merit for any semiconductor materials for high power, temperature, frequency and optoelectronic applications. The methods of deposition and the results of chemical. structural, microstructural and electrical characterization are briefly reviewed for thin films of these three materials.
引用
收藏
页码：161 / 169
页数：9
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