EVIDENCE OF TRANSIT-TIME EFFECTS IN SILICON N-NU-N SPACE-CHARGE-LIMITED CURRENT (SCLC) SOLID-STATE DEVICES

被引：7

|

作者：

CHISHOLM, SH

YEH, CS

机构：

来源：

ELECTRONICS LETTERS | 1968年 / 4卷 / 23期

关键词：

D O I：

10.1049/el:19680388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：498 / +

页数：1

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