TRANSIT-TIME EFFECTS IN PRESENCE OF TRAPS IN SPACE-CHARGE-LIMITED SOLID-STATE DEVICES

被引：3

|

作者：

WADHWA, RP

SISODIA, ML

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1967年 / 23卷 / 01期

关键词：

D O I：

10.1080/00207216708961517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：83 / +

页数：1

相关论文

共 50 条

[1] TRANSIT-TIME EFFECTS IN SPACE-CHARGE-LIMITED SOLID-STATE DIODE OPERATION
DASCALU, D
REVUE ROUMAINE DE PHYSIQUE, 1967, 12 (08): : 701 - &
[2] SPACE-CHARGE-LIMITED SOLID-STATE DEVICES
WRIGHT, GT
PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1642 - +
[3] EVIDENCE OF TRANSIT-TIME EFFECTS IN SILICON N-NU-N SPACE-CHARGE-LIMITED CURRENT (SCLC) SOLID-STATE DEVICES
CHISHOLM, SH
YEH, CS
ELECTRONICS LETTERS, 1968, 4 (23) : 498 - +
[4] NOISE IN SPACE-CHARGE-LIMITED SOLID-STATE DEVICES
HUS, ST
VANDERZI.A
CHENETTE, ER
SOLID-STATE ELECTRONICS, 1967, 10 (02) : 129 - &
[5] Chapter 3 Space-Charge-Limited Solid-State Diodes
van der Ziel, A.
Semiconductors and Semimetals, 1979, 14 (0C) : 195 - 247
[6] THERMAL NOISE IN SPACE-CHARGE-LIMITED SOLID-STATE DIODES
KLAASSEN, FM
SOLID-STATE ELECTRONICS, 1968, 11 (03) : 377 - &
[7] THERMAL NOISE IN SPACE-CHARGE-LIMITED SOLID-STATE DIODES
SHUMKA, A
SOLID-STATE ELECTRONICS, 1970, 13 (06) : 751 - &
[8] TRANSIT TIME EFFECTS IN SPACE-CHARGE-LIMITED SILICON MICROWAVE DIODE
WRIGHT, GT
SOLID-STATE ELECTRONICS, 1966, 9 (01) : 1 - &
[9] CURRENT DEPENDENCY OF THE NOISE IN SPACE-CHARGE-LIMITED SOLID-STATE DIODES
TAKAGI, K
KAKU, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) : 1897 - 1900
[10] HF THERMAL NOISE IN SPACE-CHARGE-LIMITED SOLID-STATE DIODES
VANDERZIEL, A
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1139 - +

← 1 2 3 4 5 →