ANISOTROPIC VOIGT EFFECT IN N-TYPE SILICON

被引:2
|
作者
SRIVASTAVA, GP [1 ]
KOTHARI, PC [1 ]
机构
[1] UNIV DELHI, DEPT PHYS & ASTROPHYS, DELHI 7, INDIA
来源
PHYSICA | 1973年 / 63卷 / 03期
关键词
D O I
10.1016/0031-8914(73)90153-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:570 / 576
页数:7
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