NOVEL CHEMICAL-ANALYSIS FOR THIN-FILMS - SCANNING ELECTRON-MICROSCOPY AND TOTAL-REFLECTION-ANGLE X-RAY SPECTROSCOPY (SEM-TRAXS) - X-RAY TAKE-OFF ANGLE EFFECT

Scanning electron microscopy & total-reflection-angle X-ray spectroscopy (SEM-TRAXS) was applied for fluorescence X-ray analysis of 50 angstrom- and 125 angstrom-thick Au thin films on Si(100). The intensity of the AuM line (2.15 keV) emitted from the Au thin films varied as a function of the take-off angle (theta-t) with respect to the film surface; the intensity of AuM line from the 125 angstrom-thick Au thin film was 1.5 times as large as that of SiK-alpha line (1.74 keV) emitted from the Si substrate when theta-t = 0-degrees-3-degrees, in the vicinity of a critical angle for total external reflection of the AuM line at Si (0.81-degrees). In addition, the intensity of the AuM line emitted from the 50 angstrom-thick Au thin film was also sufficiently strong for chemical analysis.