EXCIMER LASER ABLATION OF INORGANIC MATERIALS

被引：11

作者：

OMORI, N

INOUE, M

机构：

[1] Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, 661, 1-1

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90049-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The ablation of LiNbO3 and GaAs by an excimer laser has been studied at wavelengths of 193 nm (ArF, for LiNbO3) and 248 nm (KrF, for GaAs). It was observed that the concentration of the elements having lower vaporization temperatures decreased with respect to the elements having higher vaporization temperatures at the irradiated surfaces. From these results, it was obvious that a thermal effect existed in the ablation process of these materials in spite of the typical processing times which were on the order of 25 ns.

引用

页码：232 / 236

页数：5

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