PRESSURE DEPENDENCE OF DIELECTRIC PROPERTIES OF SBSI

被引：14
|
作者：
SAMARA, GA
机构：
来源：
PHYSICS LETTERS A | 1968年 / A 27卷 / 04期
关键词：
D O I：
10.1016/0375-9601(68)91110-9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：232 / &
相关论文
共 50 条
  • [31] STUDY OF PRESSURE DEPENDENCE OF DIELECTRIC POLARIZATION
    CHEN, T
    DANNHAUSER, W
    JOHARI, GP
    JOURNAL OF CHEMICAL PHYSICS, 1969, 50 (05): : 2046 - +
  • [32] Oxygen pressure dependence of dielectric properties in SrTiO3/Si heterojunctions
    Zhang, Yingtang
    Yan, Qian
    Yang, Fang
    Xu, Yuan
    Liu, Lizhu
    CERAMICS INTERNATIONAL, 2016, 42 (11) : 12672 - 12674
  • [33] The hydrostatic pressure dependence of the phase transitions and dielectric properties for a potassium niobate crystal
    Zhang, Tao
    Wu, Qiang
    Wu, Xing
    He, Hong-liang
    Gu, Yan
    Liu, Yi
    Liu, Yu-sheng
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 770 : 1147 - 1154
  • [34] Pressure dependence of dielectric properties of the LiNaGe4O9 ferroelectric
    Sieradzki, A.
    Cizman, A.
    Komar, J.
    PHASE TRANSITIONS, 2008, 81 (11-12) : 999 - 1004
  • [35] DOUBLE LOW FREQUENCY DIELECTRIC DISPERSIONS IN SBSI
    IRIE, K
    OHI, K
    FERROELECTRICS, 1974, 8 (1-2) : 555 - 556
  • [36] Dielectric and electrical properties of SbSI and SbSeI single crystals in the region of antiferroelectric phase transition
    Audzijonis, A.
    Sereika, R.
    Zigas, L.
    Zaltauskas, R.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2015, 83 : 117 - 120
  • [37] SEMICONDUCTING AND DIELECTRIC PROPERTIES OF C-AXIS ORIENTED SBSI THIN-FILM
    YOSHIDA, M
    YAMANAKA, K
    HAMAKAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (11) : 1699 - 1705
  • [38] CHANGE IN DIELECTRIC CONSTANT OF SBSI CAUSED BY ILLUMINATION
    UEDA, S
    TATSUZAKI, I
    SHINDO, Y
    PHYSICAL REVIEW LETTERS, 1967, 18 (12) : 453 - +
  • [39] PRESSURE AND TEMPERATURE-DEPENDENCE OF DIELECTRIC-PROPERTIES OF TRISSARCOSINE CALCIUM-CHLORIDE
    FUJIMOTO, S
    YASUDA, N
    TAKAGI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) : 1449 - 1456
  • [40] Oxygen pressure dependence of physical and electrical properties of LaAlO3 gate dielectric
    Lu, XB
    Lu, HB
    Dai, JY
    Chen, ZH
    He, M
    Yang, GZ
    Chan, HLW
    Choy, CL
    MICROELECTRONIC ENGINEERING, 2005, 77 (3-4) : 399 - 404
12345