共 50 条
- [41] Resonant impurity level of Ni in the valence band of Pb1-xSnxTe alloys 1600, Institute for Low Temperature Physics and Engineering (47): : 29 - 37
- [42] EFFECT OF IN IMPURITY ON THE INSULATING AND PHOTOCONDUCTING PROPERTIES OF PB1-XSNXTE SEMICONDUCTORS FERROELECTRICS FIZIKA TVERDOGO TELA, 1990, 32 (01): : 273 - 275
- [43] NARROW-GAP PB1-XSNXTE1-YSEY SOLID-SOLUTIONS WITH A CONSTANT LATTICE-PARAMETER SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1353 - 1354
- [44] THE INTRINSIC CARRIER CONCENTRATION IN PB1-XSNXTE, PB1-XSNXSE, AND PBS1-XSEX PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02): : 559 - 565
- [47] Low temperature impedance spectroscopy of Pb1-xSnxTe(In) doped with a mix valence impurity LOW TEMPERATURE PHYSICS, PTS A AND B, 2006, 850 : 1526 - +
- [48] Impurity-related magnetism in the diluted magnetic semiconductors Pb1-xSnxTe: Yb PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (05): : 1100 - 1105
- [50] MAGNETICALLY AND ELECTRICALLY ACTIVE STATES OF MANGANESE IN NARROW-GAP PB1-XSNXTE (0.18LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.23) SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 902 - 906