THE CHEMICAL VAPOR-DEPOSITION OF SIO2 FROM TETRAETHOXYSILANE - THE EFFECT OF THE SURFACE HYDROXYL CONCENTRATION

被引：42

作者：

TEDDER, LL ^{[1
]}

CROWELL, JE ^{[1
]}

LOGAN, MA ^{[1
]}

机构：

[1] LAM RES CORP,DIV CVD,SAN DIEGO,CA 92126

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.577566

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dissociative adsorption of tetraethoxysilane (TESO) on SiO2 and the subsequent decomposition of the resulting siloxane species has been studied using Fourier transform infrared transmission spectroscopy. The adsorption and decomposition processes have been studied as a function of the initial surface hydroxyl concentration. The results are compared to previous, complementary studies of the surface chemistry of ethanol on SiO2 surfaces and the temperature programmed desorption of TEOS on Si(100).

引用

页码：1002 / 1006

页数：5

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