Environmental effects on Cu/SiO2 and Cu/Ti/SiO2 thin film adhesion

被引：2
|
作者：
Tymiak, NI [1 ]
Li, M [1 ]
Volinsky, AA [1 ]
Katz, Y [1 ]
Gerberich, WW [1 ]
机构：
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
来源：
MATERIALS RELIABILITY IN MICROELECTRONICS IX | 1999年 / 563卷
关键词：
D O I：
10.1557/PROC-563-269
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For several microelectronics applications, Cu/dielectric adhesion is a key reliability issue. Either electroplating or local galvanic coupling under moist operating conditions may result in hydrogen induced interface weakening. The present study compared hydrogen effects on Cu/SiO2 adhesion for sputter deposited films with and without Ti underlayers. Thin Cu and Cu/Ti films ranging from 80-3000 nm have been evaluated. Direct observations of the surface during electrolytic charging have shown no evidence of film/substrate debonding for Cu/Ti systems. In contrast, extensive delaminations have been observed for Cu films. Indentation testing immediately after charging indicated up to 100% decrease in the practical adhesion for Ti/Cu films. The observed effect resulted from a true interfacial fracture energy reduction from 4 to 2 J/m(2). Plastic energy dissipation was assumed unaffected as no yield stress changes were detected after charging. Even with the deleterious effect of hydrogen, adhesion strength of Cu/Ti films remained higher than that of non-charged Cu films.
引用
收藏
页码：269 / 274
页数：6
相关论文
共 50 条
  • [31] Study of textural properties and nucleation phenomenon in Pd/SiO2, Ag/SiO2 and Cu/SiO2 cogelled xerogel catalysts
    Lambert, S
    Alie, C
    Pirard, JP
    Heinrichs, B
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 342 (1-3) : 70 - 81
  • [32] Giant magnetoimpedance in FM/SiO2/Cu/SiO2/FM films at GHz frequencies
    Correa, M. A.
    Bohn, F.
    Viegas, A. D. C.
    Carara, M. A.
    Schelp, L. F.
    Sommer, R. L.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2008, 320 (14) : E25 - E28
  • [33] A TPD STUDY OF H-2 ON RU/SIO2 AND RU-CU/SIO2
    JIN, T
    JO, SK
    WHITE, JM
    CATALYSIS LETTERS, 1990, 5 (02) : 217 - 228
  • [34] Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer
    Xiang, Liu
    Hui, Liu
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (03)
  • [35] Study of initial growth of Cu on SiO2 and 3-mercaptopropyltrimethoxysilane-coated SiO2
    Hu, MH
    Noda, S
    Ogawa, Y
    Tsuji, Y
    Okubo, T
    Yamaguchi, Y
    Komiyama, H
    FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV, 2001, 2001 (13): : 41 - 46
  • [36] Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer
    刘向
    刘惠
    半导体学报, 2011, 32 (03) : 54 - 56
  • [37] Adhesive Mechanism between Pt Thin Film and SiO2 Substrate after Annealing Pt/Ti/SiO2 in Air
    Wada, Mitsuhiro
    Tabira, Yasunori
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2010, 74 (09) : 578 - 583
  • [38] Effects of Thermal Annealing on the Thermoelectric and Optical Properties of SiO2/SiO2+Cu Nanolayer Thin Films
    Budak, S.
    Baker, M.
    Lassiter, J.
    Smith, C.
    Muntele, C.
    Johnson, R. B.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (06) : 1420 - 1425
  • [39] Effects of Thermal Annealing on the Thermoelectric and Optical Properties of SiO2/SiO2+Cu Nanolayer Thin Films
    S. Budak
    M. Baker
    J. Lassiter
    C. Smith
    C. Muntele
    R. B. Johnson
    Journal of Electronic Materials, 2015, 44 : 1420 - 1425
  • [40] BREAKDOWN CHARACTERISTICS IN THIN SIO2 FILM
    HAMANO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) : 1085 - 1092
12345