Broadband transitions for membrane-based coplanar waveguides on highly-conductive silicon substrates

被引:0
|
作者
Rohland, M. [1 ,2 ]
Arz, U. [1 ]
Kuhlmann, K. [1 ]
Buettgenbach, S. [2 ]
机构
[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
[2] Inst Mikrotech, D-38106 Braunschweig, Germany
关键词
D O I
10.5194/ars-10-13-2012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a transition from a contact structure built on highly-conductive silicon to a coplanar waveguide (CPW) fabricated in membrane technology. Test structures were fabricated and measured. The silicon-to-membrane transition is suitable for on-wafer probing and provides less than -10 dB measured reflection in the frequency range from 1 to 110 GHz. Measured and calculated values of the propagation constant of the membrane CPW agree well in the entire frequency range.
引用
收藏
页码:13 / 18
页数:6
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