Broadband transitions for membrane-based coplanar waveguides on highly-conductive silicon substrates

被引：0
|
作者：
Rohland, M. [1 ,2 ]
Arz, U. [1 ]
Kuhlmann, K. [1 ]
Buettgenbach, S. [2 ]
机构：
[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
[2] Inst Mikrotech, D-38106 Braunschweig, Germany
来源：
ADVANCES IN RADIO SCIENCE | 2012年 / 10卷 / 10期
关键词：
D O I：
10.5194/ars-10-13-2012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a transition from a contact structure built on highly-conductive silicon to a coplanar waveguide (CPW) fabricated in membrane technology. Test structures were fabricated and measured. The silicon-to-membrane transition is suitable for on-wafer probing and provides less than -10 dB measured reflection in the frequency range from 1 to 110 GHz. Measured and calculated values of the propagation constant of the membrane CPW agree well in the entire frequency range.
引用
收藏
页码：13 / 18
页数：6
相关论文
共 50 条
  • [1] A compact nonlinear model for coplanar waveguides on silicon substrates
    Sun, ZW
    Fay, P
    2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers, 2004, : 191 - 194
  • [2] Physics-based nonlinear circuit model for coplanar waveguides on silicon substrates
    Sun, ZW
    Fay, P
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (10) : 709 - 711
  • [3] Copper coplanar waveguides on silicon substrates for operation above 10 GHz
    Maya, RE
    Levenets, V
    Tarr, NG
    Plett, C
    ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003), 2004, : 59 - 63
  • [4] Broadband microstrip to coplanar strip line/slot line transitions on perpendicular substrates
    Ouasli, Faicel
    Coupez, Jean-Philippe
    Pajusco, Patrice
    Person, Christian
    2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2012, : 799 - 802
  • [5] Broadband microstrip to coplanar strip line/slot line transitions on perpendicular substrates
    Ouasli, Faicel
    Coupez, Jean-Philippe
    Pajusco, Patrice
    Person, Christian
    2012 9TH EUROPEAN RADAR CONFERENCE (EURAD), 2012, : 473 - 476
  • [6] Broadband compact models for transformers integrated on conductive silicon substrates
    Kamgaing, T
    Petras, M
    Miller, M
    2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, : 457 - 460
  • [7] Characterization of broad-band transmission for coplanar waveguides on CMOS silicon substrates
    George Washington Univ, Washington, United States
    IEEE Trans Microwave Theory Tech, 5 pt 2 (632-640):
  • [8] Dielectric Properties Extraction of Coplanar Propagation Waveguides on High Resistivity Silicon Substrates
    Lv, Qing
    Zhao, Hua
    Defrance, Nicolas
    Fu, Chao
    Haddadi, Kamel
    Ma, LuJuan
    PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MECHATRONICS, ELECTRONIC, INDUSTRIAL AND CONTROL ENGINEERING, 2015, 8 : 539 - 542
  • [9] Characterization of broad-band transmission for coplanar waveguides on CMOS silicon substrates
    Milanovic, V
    Ozgur, M
    DeGroot, DC
    Jargon, JA
    Gaitan, M
    Zaghloul, ME
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) : 632 - 640
  • [10] Silicon Membrane-Based Waveguide-to-Superconducting CPW Transitions at 2 mm Band
    Masukura, Akihiro
    Shan, Wenlei
    Ezaki, Shohei
    Kojima, Takafumi
    Nakajima, Taku
    Mizuno, Akira
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2023, 33 (05)
12345