SELF-DEVELOPMENT MECHANISM OF NITROCELLULOSE RESIST - ELECTRON-BEAM IRRADIATION

被引:3
|
作者
UCHIDA, T
KANEKO, H
YASUOKA, Y
GAMO, K
NAMBA, S
机构
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] NAGASAKI INST APPL SCI,NAGASAKI 85101,JAPAN
关键词
SELF-DEVELOPMENT RESIST; NITROCELLULOSE; ELECTRONIC STOPPING POWER; NUCLEAR STOPPING POWER; INFRARED SPECTRA;
D O I
10.1143/JJAP.34.2049
中图分类号
O59 [应用物理学];
学科分类号
摘要
The decomposition mechanism of a nitrocellulose film induced by irradiation of an electron beam and He+ ion beam was investigated by monitoring the changes of the infrared spectra. With irradiation of the electron beam, it was found that the electronic stopping power caused the decomposition of the nitrocellulose resist by breaking the R-O-NO2 bond. In addition, it was found that oxidation due to oxygen supplied from NO2 enhanced the decomposition, and finally, a residue was formed. This is almost the same result as obtained by heat treatment. In the case of He+ ion irradiation, the electronic stopping power caused the same decomposition process as did irradiation of the electron beam. However, the residue formed was sputtered off due to the nuclear stopping power.
引用
收藏
页码:2049 / 2052
页数:4
相关论文
共 50 条
  • [21] SELF-DEVELOPMENT PROPERTIES OF NITROCELLULOSE (DEPENDENCE ON ION ENERGIES)
    KANEKO, H
    YASUOKA, Y
    GAMO, K
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06): : 1113 - 1117
  • [23] ELECTRON-BEAM RESIST AND PHOTORESIST BEHAVIOR OF POLYCHROME POSITIVE RESIST
    HELBERT, JN
    WALKER, CC
    SEESE, PA
    GONZALES, AJ
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 275 : 182 - 186
  • [24] A POLYMER COMPLEX AS A NEW TYPE OF ELECTRON-BEAM RESIST FOR DRY DEVELOPMENT
    YONEYAMA, S
    OGUCHI, K
    WATANABE, M
    SANUI, K
    OGATA, N
    TAKAHASHI, Y
    NAKADA, T
    POLYMER ENGINEERING AND SCIENCE, 1988, 28 (14): : 912 - 915
  • [25] Electron-beam CARL resist development for 70 nm direct write
    Kirch, O
    Elian, K
    Falk, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2301 - 2303
  • [26] INSOLUBILIZATION MECHANISM AND LITHOGRAPHIC CHARACTERISTICS OF A NEGATIVE ELECTRON-BEAM RESIST IODINATED POLYSTYRENE
    UENO, T
    SHIRAISHI, H
    NONOGAKI, S
    JOURNAL OF APPLIED POLYMER SCIENCE, 1984, 29 (01) : 223 - 235
  • [27] Simulation of time-dependent charging of resist on Si under electron-beam irradiation
    Kotera, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2516 - 2519
  • [28] Resist process windows in electron-beam lithography
    Jamieson, Andrew T.
    Wilcox, Nathan
    Kwok, Wai Y.
    Kim, Yong Kwan
    PHOTOMASK TECHNOLOGY 2010, 2010, 7823
  • [29] POLYDIALLYLORTHOPHTHALATE RESIST FOR ELECTRON-BEAM LITHOGRAPHY.
    Yoneda, Yasuhiro
    Kitamura, Kenroh
    Miyagawa, Masashi
    Fujitsu Scientific and Technical Journal, 1982, 18 (03): : 453 - 467
  • [30] ORGANIC CONDUCTORS AS ELECTRON-BEAM RESIST MATERIALS
    TOMKIEWICZ, Y
    ENGLER, EM
    KUPTSIS, JD
    SCHAD, RG
    PATEL, VV
    HATZAKIS, M
    APPLIED PHYSICS LETTERS, 1982, 40 (01) : 90 - 92