DEEP LEVELS IN ALPHA-IRRADIATED PLATINUM DOPED N-TYPE SILICON

被引：4
|
作者：
ASGHAR, M
BABER, N
IQBAL, MZ
机构：
[1] Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 04期
关键词：
D O I：
10.1063/1.357549
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The deep level transient spectroscopy technique has been used to study the interaction of 5.48 MeV a particles with deep levels in Pt-doped n-type silicon. Production rates and annealing behaviors of alpha-radiation-induced levels in the presence of platinum have been investigated. Isochronal annealing characteristics of Pt-related levels before and after irradiation have also been studied. Our results are compared to published data on electron irradiation of Si:Pt.
引用
收藏
页码：2553 / 2555
页数：3
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