HIGH-PERFORMANCE ALGAAS/INGAAS PSEUDOMORPHIC HEMTS AFTER EPITAXIAL LIFT-OFF

被引：0
|
作者：
BAEYENS, Y
BRYS, C
DEBOECK, J
DERAEDT, W
NAUWELAERS, B
BORGHS, G
DEMEESTER, P
VANROSSUM, M
机构：
[1] RUG,INTEC,IMEC,B-9000 GHENT,BELGIUM
[2] IMEC,B-3001 LOUVAIN,BELGIUM
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaAs pseudomorphic HEMTs with a gatelength of 0.25 mu m were lifted-off from the GaAs substrate and attached to a MgO-substrate. Only minor differences were observed in the DC and RF characteristics before and after the epitaxial lift-off (ELO). A high extrinsic transition frequency (95 GHz) and a slightly higher microwave gain (MAG=16dB @ 12GHz) were measured after transplantation. Also typical noise characteristics were measured (NFmin=0.9dB @ 12 GHz), indicating that the high frequency noise was not affected by the ELO.
引用
收藏
页码：689 / 692
页数：4
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